Silicon Controlled Rectifier. Silicon controlled rectifier consists of three terminals anode cathode and gate unlike the two terminal diode anode and cathode rectifier. It is mainly used in the devices for the control of high power.
The heavy threaded stud attaches the device to a heatsink to dissipate heat. It may be latched by breakover voltage or by exceeding the critical rate of voltage rise between anode and cathode just as with the shockley diode. The principle of four layer p n p n switching was developed by moll tanenbaum goldey and holonyak of bell laboratories in 1956.
Silicon controlled rectifier is also sometimes referred to as scr diode 4 layer diode 4 layer device or thyristor.
Silicon controlled rectifier consists of three terminals anode cathode and gate unlike the two terminal diode anode and cathode rectifier. A silicon controlled rectifier or semiconductor controlled rectifier is a four layer solidstate current controlling device. The principle of four layer p n p n switching was developed by moll tanenbaum goldey and holonyak of bell laboratories in 1956. A rectifier is an electrical device that converts alternating current ac which periodically reverses direction to direct current dc which flows in only one direction.
